Nitride Solutions | Aluminum Nitride Substrates | Wichita, Kansas

November 17, 2012

Wide bandgap semiconductor materials such as gallium nitride can significantly outperform traditional silicon-based devices in power electronics and light-emitting diodes (LEDs). On the other hand, they’re also vastly more expensive ($1900 for a 2-in. bulk GaN substrate, vs. $25-$50 for a 6-in. Si substrate), and silicon has the advantage of being easily integrated into volume manufacturing. So where’s the midpoint where GaN’s capabilities and extra costs align to make it the technology of choice, and for which application?

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